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? AUIRLS3114Z v dss 40v r ds(on) typ. 3.8m ? max. 4.9m ? i d (silicon limited) 122a ? i d (package limited) 56a absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. features ? advanced process technology ? ultra low on-resistance ? logic level gate drive ? enhanced dv/dt and di/dt capability ? 175c operating temperature ? fast switching ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * description specifically designed for automotive applications, this hexfet? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per sili con area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetit ive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. 1 2015-11-6 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 122 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 86 ? i d @ t c = 25c continuous drain current, v gs @ 10v (wirebond limited) 56 i dm pulsed drain current ? 488 p d @t c = 25c maximum power dissipation 143 w linear derating factor 0.95 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy (thermally limited) ? 168 e as (tested) single pulse avalanche energy (tested) 518 i ar avalanche current ? see fig.15,16, 12a, 12b a e ar repetitive avalanche energy ? mj dv/dt peak diode recovery ? 2.3 v/ns t j operating junction and -55 to + 175 ? t stg storage temperature range c ? soldering temperature, for 10 seconds (1.6mm from case) 300 ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ? ??? 1.05 c/w r ? ja junction-to-ambient (pcb mount) ? ??? 40 d 2 pak AUIRLS3114Z s d g base part number package type standard pack orderable part number form quantity AUIRLS3114Z d 2 -pak tube 50 AUIRLS3114Z tape and reel left 800 AUIRLS3114Ztrl g d s gate drain source hexfet ? power mosfet
? AUIRLS3114Z 2 2015-11-6 notes: ? ? calculated continuous current based on maximum allowable junc tion temperature. bond wire current limit is 56a. note that current limitations arising from heat ing of the device leads may occur with some lead mounting arrangements. ? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax, starting t j = 25c, l = 0.107mh, r g = 50 ? , i as = 56a, v gs =10v. part not recommended for use above this value. ? i sd ?? 56a, di/dt ?? 263a/s, v dd ?? v (br)dss , t j ? 175c. ? pulse width ?? 1.0ms; duty cycle ? 2%. ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? when mounted on 1" square pcb (fr-4 or g-10 material). fo r recommended footprint and soldering techniques refer to application note #an-994 ? r ? is measured at t j approximately 90c. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.03 ??? v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance ??? 3.8 4.9 m ??? v gs = 10v, i d = 56a ?? v gs(th) gate threshold voltage 1.0 1.7 2.5 v v ds = v gs , i d = 100a ? v gs(th) gate threshold voltage coefficient ??? -6.6 ??? mv/c gfs forward trans conductance 103 ??? ??? s v ds = 10v, i d = 56a r g(int) internal gate resistance ??? 0.8 ??? ?? i dss drain-to-source leakage current ??? ??? 20 a v ds = 40v, v gs = 0v ??? ??? 250 v ds = 40v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na ? v gs = 16v ? gate-to-source reverse leakage ??? ??? -100 v gs = -16v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? 35 53 nc ? i d = 56a q gs gate-to-source charge ??? 11 ??? v ds = 20v q gd gate-to-drain charge ??? 16 ??? v gs = 4.5v ? t d(on) turn-on delay time ??? 28 ??? ns v dd = 20v t r rise time ??? 271 ??? i d = 56a t d(off) turn-off delay time ??? 43 ??? r g = 3.7 ?? t f fall time ??? 60 ??? v gs = 4.5v ? c iss input capacitance ??? 3617 ??? pf ? v gs = 0v c oss output capacitance ??? 633 ??? v ds = 25v c rss reverse transfer capacitance ??? 345 ??? ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 2378 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 570 ??? v gs = 0v, v ds = 32v, ? = 1.0mhz c oss eff. effective output capacitance ??? 875 ??? v gs = 0v, v ds = 0v to 32v ? diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 122 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 488 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 56a,v gs = 0v ?? t rr reverse recovery time ??? 33 50 ns t j = 25c ,i f = 56a, v dd = 20v q rr reverse recovery charge ??? 32 48 nc di/dt = 100a/s ??? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d )
? AUIRLS3114Z 3 2015-11-6 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 1 typical output characteristics fig. 4 typical forward trans conductance vs. drain current 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v ? 60s pulse width tj = 25c 2.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v 1 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60s pulse width 0 20406080 i d ,drain-to-source current (a) 0 25 50 75 100 125 150 175 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v
? AUIRLS3114Z 4 2015-11-6 fig 5. typical capacitance vs. drain-to-source voltage ? fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig. 7 typical source-to-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 102030405060708090 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v vds= 8v i d = 56a 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc
? AUIRLS3114Z 5 2015-11-6 fig 10. normalized on-resistance vs. temperature fg 9. maximum drain current vs. case temperature fig 11. maximum effective transient thermal impedance, junction-to-case 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 i d , d r a i n c u r r e n t ( a ) wirebond limitation -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 56a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc
? AUIRLS3114Z 6 2015-11-6 r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12b. unclamped inductive waveforms fig 12c. maximum avalanche energy vs. drain current fig 13a. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 13b. gate charge test circuit fig. 14 - threshold voltage vs. temperature 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 9.6a 20a bottom 56a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a id = 250a i d = 1.0ma id = 10ma i d = 1.0a
? AUIRLS3114Z 7 2015-11-6 ? fig 15. avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.infineon.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 11, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 16. maximum avalanche energy vs. temperature 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 56a
? AUIRLS3114Z 8 2015-11-6 ? fig 17. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets fig 18a. switching time test circuit fig 18b. switching time waveforms
? AUIRLS3114Z 9 2015-11-6 ? note: for the most current drawing please refer to ir website at http://www.irf.com/package/ d 2 pak (to-263ab) part marking information ywwa xx ? xx date code y= year ww= work week auls3114z lot code part number ir logo d 2 pak (to-263ab) package outline (dimensions are shown in millimeters (inches))
? AUIRLS3114Z 10 2015-11-6 d 2 pak (to-263ab) tape & reel information (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
? AUIRLS3114Z 11 2015-11-6 ? ? highest passing voltage. published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. ? moisture sensitivity level ? d 2 -pak msl1 esd machine model class m4 (+/- 600v) ? aec-q101-002 human body model ? class h1c (+/- 2000v) ? aec-q101-001 charged device model class c5 (+/- 2000v) ? aec-q101-005 rohs compliant yes revision history date comments 3/3/2014 ?? added "logic level gate drive" bullet in the features section on page 1 ?? updated data sheet with new ir corporate template 11/6/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1.

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